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The anti-adhesive characteristics of a plasma-modified silicon mold surface for nanoimprint lithographyare presented. Both CHF3/O2 and C4F8/O2 plasma were used to form an anti-adhesive layer on silicon moldsurfaces. The gas mixing ratios of CHF3/O2 and C4F8/O2 were experimentally changed between 0% and 80%to optimize the plasma conditions to obtain a low surface energy of the silicon mold. The plasmacharacteristics were examined by optical emission spectroscopy (OES). In order to investigate thechanges in surface energy and surface chemistry of the anti-adhesive layer during repeated demoldingcycles, contact angle measurements and X-ray photoelectron spectroscopy (XPS) were performed on theplasma-modified silicon mold surface. Simultaneously, the surface morphology of the demolded resistswas evaluated by field-emission scanning electron microscope (FE-SEM) in order to examine the effect ofthe anti-adhesive layers on the duplicated patterns of the resists. It was observed that the anti-adhesivelayer formed by CHF3/O2 plasma treatment was worn out more easily during repeated demolding cyclesthan the film formed by C4F8/O2 plasma treatment, because CHF3/O2 gas plasma formed a thinnerplasma-polymerized film over the same plasma treatment time.
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