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Boron nitride nanotubes (BNNTs) have been an outstandingsource of research as a typical representative of III–V compoundsemiconductors, partially because they have the morphology ofhoneycomb analogous to carbon nanotubes (CNTs). Althoughbetween CNTs and BNNTs have many similarities, but unliketo CNTs, BNNTs are semiconducting with a very stable wideenergy gap, excellent mechanical properties, strong piezoelectricalproperties, chemical stability, thermal conductivity, and oxidationresistance at high temperatures, performance thus valuablein corrosive and high-temperature environments[1–4], and theirelectronic properties are independent of the tube diameter, chiralityand whether a nanotube is single-walled or multi-walled.However, there has been much investigation that approved BNNTscan be the best candidate because of their similarities to CNTs [5,6].Moreover, studies have revealed that CNTs, BNNTs are the mostimportant nanotubes because of the alternative properties to carbonnanotubes. Boron nitride nanotubes (BNNTs) are one of thecomposite nanotubes [4], which have been predicted theoreticallyin 1994 [7] and then experimentally synthesized in 1995 as beingmainly semiconductor materials with wide band gaps [8]. Similarto carbon nanotubes, both covalent and non-covalent functionalizationplans have been adopted for solubilizing BNNT.
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